Title :
Radiation Hardness of Ovonic Devices
Author :
Ovshinsky, Stanford R. ; Evans, E.J. ; Nelson, D.L. ; Fritzsche, H.
Author_Institution :
Energy Conversion Devices, Inc. Troy, Michigan 48084
Abstract :
Ovonic threshold switches have been exposed to pulses of flash X-rays to levels of 1.8×1011 rads/sec and to fast neutron fluences of as high as nvt = 1.2×1017 n/cm2. The switching devices have continued to function during the transient of the X-ray flash and experienced no permanent damage or change of their electrical parameters in excess of the resolution of the experimental testing procedure which was about ±100% in the case of the neutron exposure.
Keywords :
Amorphous materials; Atomic measurements; Circuit testing; Electrodes; Energy conversion; Ionizing radiation; Neutrons; Power semiconductor switches; Switching circuits; X-rays;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1968.4325062
