• DocumentCode
    789545
  • Title

    Magnetisation reversal and domain structure in thin magnetic films: theory and computer simulation

  • Author

    Nowak, U.

  • Author_Institution
    Gerhard-Mercator-Univ. Duisburg, Germany
  • Volume
    31
  • Issue
    6
  • fYear
    1995
  • fDate
    11/1/1995 12:00:00 AM
  • Firstpage
    4169
  • Lastpage
    4171
  • Abstract
    A model is introduced for the theoretical description of nanoscale magnetic films with high perpendicular anisotropy. In the model the magnetic film is described in terms of single domain magnetic grains, interacting via exchange as well as via dipolar forces. Additionally, the model contains anisotropy energy and a coupling to an external magnetic field. Disorder is taken into account in order to describe realistic domain and domain wall structures. Within this framework the dependence of the energy on the film thickness can be discussed. The influence of a finite temperature as well as the dynamics can be modeled by a Monte Carlo simulation. The results on the hysteresis loops, the domain configurations, and the dynamics during the reversal process are in good agreement with experimental findings
  • Keywords
    Monte Carlo methods; exchange interactions (electron); ferromagnetism; magnetic domain walls; magnetic domains; magnetic hysteresis; magnetic thin films; magnetisation reversal; nanostructured materials; perpendicular magnetic anisotropy; Monte Carlo simulation; computer simulation; dipolar forces; domain configurations; domain structure; domain wall; domain wall structures; exchange interactions; high perpendicular anisotropy; magnetisation reversal; nanoscale magnetic films; single domain magnetic grains; thin magnetic films; Anisotropic magnetoresistance; Computer simulation; Couplings; Energy barrier; Magnetic domain walls; Magnetic domains; Magnetic fields; Magnetic films; Magnetization reversal; Saturation magnetization;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.489915
  • Filename
    489915