DocumentCode
789658
Title
Ion-Implanted Magnetic Bubble Memory Devices
Author
Toyooka, T.
Author_Institution
Central Research Laboratory, Hitachi, Ltd.
Volume
3
Issue
1
fYear
1988
Firstpage
13
Lastpage
21
Abstract
High-density magnetic bubble memory devices have been developed by using ion-implanted tracks. Hybrid type devices, composed of ion-implanted tracks for high-density data storage and Permalloy tracks for write and read functions, have an advantage in compatibility with Permalloy devices in commercial use. The characteristics of junctions connecting the two type tracks are improved by a new design in which both ends of a corner Permalloy pattern are superposed with ion-implanted tracks. Functions with ion-implanted tracks and conductors also have been developed to realize a 4 Mbit device. The cache loop method, in which data storage loops are connected with a write/read major line by cache loops, is used to reduce mean access and cycle time of the device.
Keywords
Conductors; Hybrid junctions; Joining processes; Magnetic devices; Magnetics Society; Read-write memory; Research and development; Robots; Tracking loops; Weight control;
fLanguage
English
Journal_Title
Magnetics in Japan, IEEE Translation Journal on
Publisher
ieee
ISSN
0882-4959
Type
jour
DOI
10.1109/TJMJ.1988.4563638
Filename
4563638
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