DocumentCode :
789658
Title :
Ion-Implanted Magnetic Bubble Memory Devices
Author :
Toyooka, T.
Author_Institution :
Central Research Laboratory, Hitachi, Ltd.
Volume :
3
Issue :
1
fYear :
1988
Firstpage :
13
Lastpage :
21
Abstract :
High-density magnetic bubble memory devices have been developed by using ion-implanted tracks. Hybrid type devices, composed of ion-implanted tracks for high-density data storage and Permalloy tracks for write and read functions, have an advantage in compatibility with Permalloy devices in commercial use. The characteristics of junctions connecting the two type tracks are improved by a new design in which both ends of a corner Permalloy pattern are superposed with ion-implanted tracks. Functions with ion-implanted tracks and conductors also have been developed to realize a 4 Mbit device. The cache loop method, in which data storage loops are connected with a write/read major line by cache loops, is used to reduce mean access and cycle time of the device.
Keywords :
Conductors; Hybrid junctions; Joining processes; Magnetic devices; Magnetics Society; Read-write memory; Research and development; Robots; Tracking loops; Weight control;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1988.4563638
Filename :
4563638
Link To Document :
بازگشت