• DocumentCode
    789658
  • Title

    Ion-Implanted Magnetic Bubble Memory Devices

  • Author

    Toyooka, T.

  • Author_Institution
    Central Research Laboratory, Hitachi, Ltd.
  • Volume
    3
  • Issue
    1
  • fYear
    1988
  • Firstpage
    13
  • Lastpage
    21
  • Abstract
    High-density magnetic bubble memory devices have been developed by using ion-implanted tracks. Hybrid type devices, composed of ion-implanted tracks for high-density data storage and Permalloy tracks for write and read functions, have an advantage in compatibility with Permalloy devices in commercial use. The characteristics of junctions connecting the two type tracks are improved by a new design in which both ends of a corner Permalloy pattern are superposed with ion-implanted tracks. Functions with ion-implanted tracks and conductors also have been developed to realize a 4 Mbit device. The cache loop method, in which data storage loops are connected with a write/read major line by cache loops, is used to reduce mean access and cycle time of the device.
  • Keywords
    Conductors; Hybrid junctions; Joining processes; Magnetic devices; Magnetics Society; Read-write memory; Research and development; Robots; Tracking loops; Weight control;
  • fLanguage
    English
  • Journal_Title
    Magnetics in Japan, IEEE Translation Journal on
  • Publisher
    ieee
  • ISSN
    0882-4959
  • Type

    jour

  • DOI
    10.1109/TJMJ.1988.4563638
  • Filename
    4563638