DocumentCode :
789694
Title :
Co-Cr Perpendicular Anisotropy Film Deposited by Evaporation with Ion Bombardment
Author :
Nambu, T. ; Sugita, R. ; Sakamoto, Y.
Author_Institution :
Matsushita Electric Industrial Co., Ltd.
Volume :
3
Issue :
1
fYear :
1988
Firstpage :
28
Lastpage :
34
Abstract :
The effect of ion bombardment during film growth was investigated for perpendicular anisotropy CoCr films. Films were prepared by a web-coater type evaporating system equipped with a Kaufman 3-cm ion source. The Ms, Hc ⊥ and δθ50 decreased, while Hk/spl pert/ and the grain size increased, in bombarded films. These results indicate a reduction in crystallographic defects and Cr segregation, suggesting that grain boundaries play an important role in the segregation.
Keywords :
Anisotropic magnetoresistance; Argon; Ion sources; Magnetic films; Magnetic properties; Magnetics Society; Microstructure; Polymer films; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1988.4563640
Filename :
4563640
Link To Document :
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