Author :
Karachinsky, L.Ya. ; Kettler, T. ; Gordeev, N.Yu. ; Novikov, I.I. ; Maximov, M.V. ; Shernyakov, Yu.M. ; Kryzhanovskaya, N.V. ; Zhukov, A.E. ; Semenova, E.S. ; Vasil´ev, A.P. ; Ustinov, V.M. ; Ledentsov, N.N. ; Kovsh, A.R. ; Shchukin, V.A. ; Mikhrin, S.S.
Author_Institution :
A.F. Ioffe Physico-Tech. Inst., Russian Acad. of Sci., St. Petersburg, Russia
Abstract :
Narrow ridge stripe lasers with metamorphic InAs/InGaAs quantum dots grown using molecular beam epitaxy on GaAs substrates emit in the 1.5 μm wavelength range demonstrating a differential quantum efficiency of about 50%, singlemode operation, and maximum continuous-wave power of 220 mW limited by thermal roll-over. Absence of beam filamentation is demonstrated up to the highest power levels studied.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum dot lasers; 1.5 micron; 220 mW; GaAs; InAs-InGaAs; beam filamentation; differential quantum efficiency; high-power singlemode CW operation; metamorphic InAs/InGaAs quantum dots; molecular beam epitaxy; narrow ridge stripe lasers; quantum dot GaAs-based laser; singlemode operation; thermal roll-over;
