Annealing-induced properties of Al-N-M (M: Co, Fe) thin films

Author

Roy, A.G. ; Nittono, O.

Author_Institution

Data Storage Syst. Center, Carnegie Mellon Univ., Pittsburgh, PA, USA

Volume

39

Issue

5

fYear

2003

Firstpage

3025

Lastpage

3027

Abstract

Al-N-M (Co, Fe) thin films were reactively deposited with two different combinations of targets, namely Al-Co50Fe50 and Al-Co20Fe80 targets, in a two-facing-target type dc sputtering (TFTS) system. Their structural changes were investigated together with the magnetic and electrical property changes accompanying annealing. The magnetization increases with annealing time and temperature for both types of film. All the films show semiconducting conduction except the annealed films prepared with the Al-Co50Fe50 target combination, which show ohmic conduction.

Keywords

aluminium compounds; annealing; cobalt compounds; electrical resistivity; ferromagnetic materials; iron compounds; magnetic semiconductors; magnetic thin films; magnetisation; phase separation; semiconductor thin films; sputtered coatings; Al-Co20Fe80 targets; Al-Co50Fe50 targets; Al-N-Co-Fe; Al-N-M thin films; annealing temperature; annealing time; annealing-induced properties; electrical property changes; granular film; isothermal annealing; magnetic property changes; ohmic conduction; reactive deposition; resistivity; saturation magnetization; semiconducting conduction; structural changes; two-facing-target type de sputtering system; Annealing; Conductive films; Iron; Magnetic films; Magnetic properties; Magnetic semiconductors; Magnetization; Semiconductor films; Sputtering; Transistors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2003.815878

Filename

1233293