Author :
Xiong, W. ; Cleavelin, C. Rinn ; Wise, R. ; Yu, S. ; Pas, M. ; Zaman, R.J. ; Gostkowski, M. ; Matthews, K. ; Maleville, C. ; Patruno, P. ; King, T.-J. ; Colinge, J.P.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Effects that are found exclusively in partially depleted or fully depleted SOI MOSFETs are shown to appear simultaneously in n-channel FinFETs. The gate-induced floating body effect is normally observed in partially depleted devices only, while ideal subthreshold slope is an exclusive trademark of fully depleted devices. Both effects can be observed concurrently in fully depleted FinFETs if the application of a back bias creates an accumulation layer at the bottom of the device.
