DocumentCode :
790135
Title :
Magnetoresistive Effect in Transition Region of PN Junction and Its Application Circuits
Author :
Ishibashi, S.
Author_Institution :
Tokyo Engineering Univ.
Volume :
3
Issue :
3
fYear :
1988
fDate :
3/1/1988 12:00:00 AM
Firstpage :
263
Lastpage :
269
Abstract :
Magnetic effects in semiconductor devices have so far been utilized primarily in bulk materials. In this paper, a device is proposed in which a magnetic effect in a junction region is utilized. Also proposed is a circuit that may be used to detect differences in magnetic effects as a voltage. This detection circuit is directly connected to a dc amplifier or an astable multivibrator, the output of which can be used to determine magnetic field strengths. The application of IC technology may enable replacement of conventional switches, such as digital switches, with the present device. The same concept can also be applied to drive switching circuits, such as counter circuits, by using a controlling magnetic field.
Keywords :
Magnetic circuits; Magnetic devices; Magnetic fields; Magnetic materials; Magnetic semiconductors; Magnetoresistance; Semiconductor devices; Semiconductor materials; Switches; Voltage;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1988.4563687
Filename :
4563687
Link To Document :
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