DocumentCode :
79051
Title :
InGaN-LD-Pumped 
: 
Continuous-Wave Laser at 915 nm
Author :
Biao Qu ; Bin Xu ; Yongjie Cheng ; Saiyu Luo ; Huiying Xu ; Yikun Bu ; Camy, Patrice ; Doualan, Jean-Louis ; Moncorge, Richard ; Zhiping Cai
Author_Institution :
Dept. of Electron. Eng., Xiamen Univ., Xiamen, China
Volume :
6
Issue :
6
fYear :
2014
fDate :
Dec. 2014
Firstpage :
1
Lastpage :
11
Abstract :
We demonstrate the first InGaN-LD-pumped room temperature and continuous-wave laser operation of a Pr3+: LiYF4 crystal at 915 nm. A maximum output power up to 78 mW with a laser slope efficiency of about 17% is obtained. The round-trip optical losses are estimated to be about 0.45%, and the M2 beam quality factors measured in x and y dimensions are about 1.07 and 1.04, respectively.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; lithium compounds; optical losses; optical pumping; semiconductor lasers; solid lasers; wide band gap semiconductors; yttrium compounds; InGaN; InGaN-LD-pumped room temperature; LiYF4:Pr3+; beam quality factors; continuous-wave laser operation; crystal; laser slope efficiency; round-trip optical losses; temperature 293 K to 298 K; wavelength 915 nm; Diode lasers; Laser excitation; Laser transitions; Pump lasers; Semiconductor lasers; Solid lasers; Diode-pumped lasers; Solid state lasers; diode-pumped lasers; infrared lasers;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2014.2374618
Filename :
6977881
Link To Document :
