First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters

Author

Chee-Keong Tan ; Jing Zhang ; Xiao-Hang Li ; Guangyu Liu ; Tayo, B.O. ; Tansu, N.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

Volume

9

Issue

4

fYear

2013

fDate

Apr-13

Firstpage

272

Lastpage

279

Abstract

The band structure of dilute-As GaNAs alloy with the As composition range from 0% to 12.5% is studied by using First-Principle density-functional calculation. Our analysis shows that the dilute-As GaNAs alloy exhibits the direct band gap properties. The dilute-As GaNAs alloy shows a band gap range from 3.645 eV down to 2.232 eV with As content varying from 0% to 12.5%, which covers the blue and green spectral regime. This finding indicates the alloy as a potential candidate for photonic devices applications. The bowing parameter of 14.5 eV ±0.5 eV is also obtained using line fitting with the First-Principle and experimental data. The effective masses for electrons and holes in dilute-As GaNAs alloy, as well as the split-off energy parameters, were also presented. Minimal interband Auger recombination is also suggested for the dilute-As GaNAs alloy attributing to the off-resonance condition for this process.

Keywords

Auger effect; III-V semiconductors; ab initio calculations; density functional theory; effective mass; electron-hole recombination; energy gap; gallium arsenide; gallium compounds; wide band gap semiconductors; GaNAs; band structure; blue spectra; bowing parameter; composition range; dilute alloy; direct band gap properties; effective masses; first-principle density-functional calculation; first-principle electronic properties; green spectra; line fitting; minimal interband Auger recombination; off-resonance condition; photonic devices; split-off energy parameters; visible light emitters; Discrete Fourier transforms; Effective mass; Gallium nitride; Impurities; Light emitting diodes; Photonic band gap; Solid state lighting; Auger recombination; First-Principle; band parameters; band structure; dilute-As GaNAs; lasers; light-emitting diodes;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2013.2248342

Filename

6473846