Novel nonmagnetic 30-dB traveling-wave single-sideband optical isolator integrated in III/V material

Author

Bhandare, Suhas ; Ibrahim, Selwan K. ; Sandel, David ; Zhang, Hongbin ; Wüst, Frank ; Noé, Reinhold

Author_Institution

Chair for Opt. Commun. & High-Frequency Eng., Univ. of Paderborn, Germany

Volume

11

Issue

2

fYear

2005

Firstpage

417

Lastpage

421

Abstract

Various attempts have been made to fabricate waveguide-type isolators in III/V material by implanting magnetic materials, but none of them has so far resulted in a commercial product. Here, we report for first time on an integrated optical isolator implemented in III/V material. It consists of a single-sideband electrooptic modulator where traveling electrical waves make the transmission direction-dependent. Isolation is 30 dB, excess insertion loss is 8 dB. Residual rms ripple is 7% for peak-to-peak RF driving amplitudes of 3.5 V at 4.0 GHz. The estimated transmission penalty for 40 Gb/s return-to-zero differential phase shift keying (RZ-DPSK) signals is 0.2 dB (0 dB measured).

Keywords

III-V semiconductors; electro-optical modulation; integrated optics; optical communication equipment; optical isolators; phase shift keying; 3.5 V; 4.0 GHz; 40 Gbit/s; 8 dB; III/V material; electrooptic modulator; insertion loss; integrated optical isolator; nonmagnetic isolator; return-to-zero differential phase shift keying; single-sideband isolator; transmission penalty; traveling electrical waves; traveling-wave isolator; Electrooptic modulators; Insertion loss; Integrated optics; Isolators; Magnetic materials; Optical losses; Optical materials; Optical modulation; Optical waveguides; Radio frequency; Integrated optical devices; optical isolator; traveling-wave (TW) devices;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2005.845620

Filename

1425478