Title :
Punchthrough transient voltage suppressor for low-voltage electronics
Author :
King, Ya-Chin ; Yu, Bin ; Pohlman, Jeff ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
7/1/1995 12:00:00 AM
Abstract :
Transient voltage suppressors for electronic circuits with power supply voltage of 3.3 V or lower are urgently needed but unavailable due to excessive leakage of low-voltage reversed p-n diodes. We analyzed several candidate device structures by using two-dimensional device simulation. Adopting the punchthrough mechanism in an n/sup +/p/sup +/p/sup -/n/sup +/ structure rather than the traditional avalanche mechanism in a p/sup +/n/sup +/ structure, we can achieve low standoff voltage with excellent performances in low leakage current, low capacitance, and low clamping voltage. The new device appears to be satisfactory for protecting future electronic systems with power supply voltage at least down to 1.5 V.<>
Keywords :
leakage currents; overvoltage protection; semiconductor diodes; surge protection; transients; 1.5 to 3.3 V; low capacitance; low clamping voltage; low leakage current; low-voltage electronics; n/sup +/p/sup +/p/sup -/n/sup +/ structure; punchthrough mechanism; punchthrough transient voltage suppressor; two-dimensional device simulation; Analytical models; Capacitance; Circuit simulation; Clamps; Diodes; Electronic circuits; Leakage current; Low voltage; Power supplies; Power system protection;
Journal_Title :
Electron Device Letters, IEEE
