Title :
A voltage tunable threshold logic gate based on multiquantum-well heterojunction bipolar transistor for multifunction logic
Author :
Goswami, S. ; Singh, J. ; Bhattacharya, P.K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
The properties of a heterojunction bipolar transistor with a multiquantum-well collector region for its application as a voltage tunable logic element are examined. The quantum confined Stark effect gives rise to a strong negative differential resistance in the photocurrent-voltage characteristic of the device, which allows the device to be switched optically and/or electronically. This permits the realization of a circuit where the NAND, INVERSE CARRY, and NOR logic functions can be implemented by simply changing the biasing
Keywords :
bipolar integrated circuits; heterojunction bipolar transistors; integrated logic circuits; logic gates; semiconductor quantum wells; INVERSE CARRY; NAND; NOR logic functions; biasing; multifunction logic; multiquantum-well collector region; multiquantum-well heterojunction bipolar transistor; negative differential resistance; photocurrent-voltage characteristic; quantum confined Stark effect; voltage tunable threshold logic gate; Bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Logic devices; Logic functions; Logic gates; Quantum well devices; Stark effect; Stimulated emission; Threshold voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
