A proposed collector design of double heterojunction bipolar transistors for power applications

Author

Liu, W. ; Pan, D.S.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

16

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

309

Lastpage

311

Abstract

A new collector design for the AlGaAs-GaAs double heterostructure bipolar transistor (DHBT) is proposed, analyzed, and simulated. The base-collector junction is linearly graded and terminated with a highly doped thin layer to offset the adverse alloy grading electric field. Simple analytical formulas are derived to facilitate the implementation of the design. A proof-of-principle simulation has been carried out for an X-band AlGaAs-GaAs power DHBT to confirm the design and the derived formula. The simulation shows the breakdown voltage can be increased from 30 V to about 45 V while the critical current density is about the same. It is also shown that, unlike other refined DHBT structures, the proposed structure does not require critical control in the fabrication of the base-collector junction.<>

Keywords

III-V semiconductors; aluminium compounds; current density; electric breakdown; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 30 to 45 V; AlGaAs-GaAs; X-band; base-collector junction; breakdown voltage; collector design; critical current density; double heterojunction bipolar transistors; highly doped thin layer; linearly graded junction; power DHBT; power applications; Analytical models; Bipolar transistors; Critical current density; Current density; Doping; Double heterojunction bipolar transistors; Electrons; Fabrication; Space charge; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.388717

Filename

388717