DocumentCode :
790971
Title :
Characteristics of Dual Gate for 16 Mb Ion-Implanted Bubble Memory Devices
Author :
Sato, Takao ; Toyooka, T. ; Takeshita, M. ; Suzuki, R.
Author_Institution :
Hitachi Ltd.
Volume :
3
Issue :
7
fYear :
1988
fDate :
7/1/1988 12:00:00 AM
Firstpage :
513
Lastpage :
514
Keywords :
Conductors; Current measurement; Garnet films; Hydrogen; Magnetics; Phase measurement; Pulse measurements; Pulse shaping methods; Shape; Tellurium;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1988.4563770
Filename :
4563770
Link To Document :
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