Title :
Sub-0.1 μm NMOS transistors fabricated using laser-plasma point-source X-ray lithography
Author :
Rittenhouse, C.E. ; Mansfield, W.M. ; Kornblit, A. ; Cirelli, R.A. ; Tomes, D. ; Celler, G.K.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
7/1/1995 12:00:00 AM
Abstract :
We report the experimental results of the first MOSFET´s ever fabricated using a laser plasma-source X-ray stepper. The minimum gate length of these transistors is 0.12 μm with an effective channel length of 0.075 μm. These transistors were patterned using a mix-and-match lithography scheme where the gate level was printed using a 1.4 nm plasma-source X-ray stepper while the other layers were patterned using optical lithography.
Keywords :
MOSFET; X-ray lithography; semiconductor technology; 0.075 micron; 0.12 micron; MOSFET; NMOS transistors; X-ray stepper; effective channel length; gate level printing; laser-plasma point-source X-ray lithography; minimum gate length; mix-and-match lithography scheme; Etching; MOSFETs; Optical buffering; Plasma applications; Plasma density; Plasma devices; Plasma x-ray sources; Throughput; X-ray lasers; X-ray lithography;
Journal_Title :
Electron Device Letters, IEEE
