Title :
Magnetic entropy change in the Ge-rich alloys Gd-Si-Ge
Author :
Zhuo, Yi ; Chahine, R. ; Bose, T.K.
Author_Institution :
Inst. de Recherche sur l´´Hydrogene, Quebec Univ., Trois-Rivieres, Que., Canada
Abstract :
We have studied the temperature and field dependence of the magnetocaloric effect in the Ge-rich alloys Gd5(SixGe1-x)4, where x=0.0825, 0.15, and 0.1875. The low field susceptibility shows a two-step magnetic ordering at the Curie temperature TC and the Neel temperature TN. The TC of the different compositions covers the temperature range 67 K-108 K while TN remains constant at around 133 K. The magnetic entropy change ΔSM(T) as a function of applied field up to 7 Tesla is characterized by a second-order magnetic phase transition around TN and a first-order transition around TC. The maximum magnetic entropy change around TN is only about 3 J·kg-1·K-1, but it is much larger around TC. It rapidly reaches a saturation plateau of about 40-50 J·kg-1·K-1, which widens with increasing field. The width of the plateau at an applied field of 7 T is about 20 K. These results indicate that the Ge-rich alloys are potentially good candidates for MR applications at low temperature.
Keywords :
Curie temperature; Ge-Si alloys; Neel temperature; antiferromagnetic materials; ferromagnetic materials; ferromagnetic-antiferromagnetic transitions; ferromagnetic-paramagnetic transitions; gadolinium alloys; magnetic susceptibility; magnetocaloric effects; 133 K; 20 K; 67 to 108 K; 7 T; Curie temperature; Gd-Si-Ge; Gd5(SixGe1-x)4; Ge-rich alloys; Neel temperature; field dependence; first-order transition; low field susceptibility; magnetic entropy change; magnetic phase transition; magnetocaloric effect; saturation plateau; second-order magnetic phase transition; temperature dependence; two-step magnetic ordering; Entropy; Germanium alloys; Magnetic materials; Magnetostriction; Paramagnetic materials; Saturation magnetization; Silicon alloys; Superconducting magnets; Temperature; X-ray diffraction;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2003.816256