Simulation of deep submicron SOI N-MOSFET considering the velocity overshoot effect

Author

Woo-Sung Choi ; Assaderaghi, F. ; Young-June Park ; Hong-Shick Min ; Chenming Hu ; Dutton, R.W.

Author_Institution

Dept. of Electron. Eng., Seoul Nat. Univ., South Korea

Volume

16

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

333

Lastpage

335

Abstract

A set of numerical simulations were performed on 0.22 μm SOI MOSFET´s with relatively uniform channel field and charge using the hydrodynamic model, the energy transport model, and the drift-diffusion model. The simulation results based on the advanced models (hydrodynamic and energy transport) show nearly identical results for the I-V characteristics and they agreed quite well with the experimental results, while the results from drift-diffusion model do not. Also the simulation results show that both the hydrodynamic and energy transport models handle the effect of velocity overshoot on the I-V characteristic of the 0.12 μm device well.

Keywords

MOSFET; digital simulation; semiconductor device models; silicon-on-insulator; 0.12 micron; I-V characteristics; deep submicron SOI N-MOSFET; drift-diffusion model; energy transport model; hydrodynamic model; numerical simulations; uniform channel field; velocity overshoot effect; Doping; Electrical resistance measurement; High definition video; Hydrodynamics; MOSFET circuits; Numerical simulation; Physics; Predictive models; Velocity measurement; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.388725

Filename

388725