Resonant tunneling injection quantum-well lasers

Author

Lutz, Charles R., Jr. ; Agahi, Farid ; Lau, Kei May

Author_Institution

Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA

Volume

7

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

596

Lastpage

598

Abstract

We report, for the first time, the observation of resonant tunneling induced negative differential characteristics in the light-current (L-I) and light-voltage (L-V) curves of a single-quantum-well semiconductor laser. Broad-stripe lasers have exhibited CW threshold current density of 50 A/cm/sup 2/ at 77 K, with a sharp decrease in output light power at 68 A/cm/sup 2/, which corresponds to a resonant point in the current-voltage (I-V) characteristics of the device. Peak to valley ratios of more than 1.5:1 were observed in the L-I and L-V curves.<>

Keywords

current density; negative resistance devices; quantum well lasers; resonant tunnelling devices; 77 K; AlGaAs-InGaAs-GaAs; CW threshold current density; SCH-SQW laser; broad-stripe lasers; current-voltage characteristics; light-current curves; light-voltage curves; output light power; peak to valley ratios; resonant point; resonant tunneling induced negative differential characteristics; resonant tunneling injection quantum-well lasers; single-quantum-well semiconductor laser; Bandwidth; Diode lasers; Electrons; Gallium arsenide; Quantum well lasers; Resonance; Resonant tunneling devices; Semiconductor lasers; Senior members; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.388735

Filename

388735