Title :
The dependence of the maximum operating temperature of long wavelength semiconductor lasers on physical and material device parameters
Author :
Evans, J.D. ; Simmons, J.G.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
fDate :
6/1/1995 12:00:00 AM
Abstract :
An new expression relating the theoretical maximum operating temperature, T/sub max/, of an InGaAsP-InP-based laser to adjustable device structural and material parameters, such as the cavity length, L, facet reflectivity R, transparency current density, J/sub th/, and the modal gain coefficient /spl beta/, is presented. The validity of this relationship is demonstrated through an examination of empirical results on two sets of unstrained multiple quantum-well (MQW) laser structures with different QW widths.<>
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser cavity resonators; laser theory; quantum well lasers; reflectivity; InGaAsP-InP; InGaAsP-InP-based laser; MQW; QW widths; cavity length; facet reflectivity; long wavelength semiconductor lasers; material device parameters; material parameters; maximum operating temperature; modal gain coefficient; physical parameters; structural parameters; transparency current density; unstrained multiple quantum-well laser structures; Laser theory; Optical materials; Quantum well devices; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Temperature dependence; Temperature distribution; Temperature sensors; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
