Simultaneous magnetic force microscopy and magnetoresistance characterization of a magnetic tunnel junction with in situ applied field

Author

Leib, J.S. ; Baker, B.J. ; Shen, Y.P. ; Snyder, J.E. ; Kawaguchi, T. ; Jiles, D.C.

Author_Institution

U.S. Dept. of Energy, Ames Lab., IA, USA

Volume

39

Issue

5

fYear

2003

Firstpage

3456

Lastpage

3458

Abstract

For the first time, both the magnetoelectronic properties and the magnetic domain structure of a magnetic tunnel junction (MTJ) have been characterized simultaneously. In situ tunneling magnetoresistance measurements for a spin-dependent tunnel junction were directly compared to magnetic domain behavior imaged using magnetic force microscopy (MFM) under the same applied fields, allowing for detailed investigation of electronic behavior relative to magnetic behavior. From the results, it was found that the resistance in the hysteretic field range (less than the coercivity of Hc=800 A/m or 10 Oe) corresponded with the complex magnetic domain behavior observed in the MFM images and qualitatively matched micromagnetically modeled junctions.

Keywords

magnetic domains; magnetic force microscopy; magnetoresistance; spin polarised transport; tunnelling magnetoresistance; MFM; MTJ; magnetic domain behavior; magnetic domain structure; magnetic force microscopy; magnetic tunnel junction; magnetoresistance characterization; micromagnetically modeled junctions; spin-dependent tunnel junction; Electrical resistance measurement; Electron microscopy; Force measurement; Magnetic domains; Magnetic field measurement; Magnetic force microscopy; Magnetic forces; Magnetic properties; Magnetic tunneling; Tunneling magnetoresistance;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2003.816181

Filename

1233427