Title :
High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths
Author :
Murtaza, S.S. ; Tan, I.-H. ; Chelakara, R.V. ; Islam, M.R. ; Srinivasan, A. ; Anselm, K.A. ; Bowers, J.E. ; Hu, E.L. ; Dupuis, R.D. ; Streetman, B.G. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
Demonstrates a high-efficiency dual-wavelength resonant-cavity photodetector (RECAP) operating in two distinct wavelength bands. The absorption takes place in an InP-In/sub 0.53/Ga/sub 0.47/As Fabry-Perot cavity that has been bonded to a GaAs-AlAs dual-wavelength mirror. Greater than 80% external quantum efficiency was achieved in both the wavelength bands.<>
Keywords :
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; cavity resonators; gallium arsenide; indium compounds; infrared detectors; laser mirrors; mirrors; optical receivers; photodetectors; 1.3 mum; 1.55 mum; GaAs-AlAs; GaAs-AlAs dual-wavelength mirror; InP-In/sub 0.53/Ga/sub 0.47/As Fabry-Perot cavity; InP-InGaAs; RECAP; high-efficiency dual-wavelength wafer-fused resonant-cavity photodetector; quantum efficiency; Absorption; Bonding; Fabry-Perot; Mirrors; Optical fiber communication; Optical fibers; Optical refraction; PIN photodiodes; Photodetectors; Resonance;
Journal_Title :
Photonics Technology Letters, IEEE
