Title :
High-speed monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and HEMT´s
Author :
Muramoto, Y. ; Kato, K. ; Akahori, Y. ; Ikeda, M. ; Kozen, A. ; Itaya, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
A novel side-illuminated receiver OEIC, consisting of a waveguide p-i-n photodiode and an InAlAs-InGaAs-HEMT transimpedance amplifier, was fabricated by a dry-etching based process. The OEIC has a 3-dB bandwidth of 8.3 GHz and a transimpedance of 100 /spl Omega/, which enables it to receive a 10-Gb/s NRZ signal. These results represent a major advance in achieving ultrahigh-speed side-illuminated OEICs for long-wavelength optical interconnection and transmission systems.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; amplifiers; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; very high speed integrated circuits; 10 Gbit/s; 100 ohm; 8.3 GHz; InAlAs-InGaAs-HEMT transimpedance amplifier; bandwidth; dry-etching based process; fabrication; high-speed monolithic receiver OEIC; long-wavelength optical interconnection; side-illuminated receiver OEIC; transmission systems; waveguide p-i-n photodiode; Bandwidth; Circuits; HEMTs; Indium phosphide; Optical buffering; Optical interconnections; Optical receivers; Optical waveguides; Optoelectronic devices; PIN photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
