Nanoheteroepitaxy for the integration of highly mismatched semiconductor materials

Author

Hersee, Stephen D. ; Zubia, David ; Sun, Xinyu ; Bommena, R. ; Fairchild, Mike ; Zhang, S. ; Burckel, David ; Frauenglass, A. ; Brueck, S.R.J.

Author_Institution

Dept. of Electr. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA

Volume

38

Issue

8

fYear

2002

fDate

8/1/2002 12:00:00 AM

Firstpage

1017

Lastpage

1028

Abstract

We describe an ongoing study of nanoheteroepitaxy (NHE), the use of nanoscale growth-initiation areas for the integration of highly mismatched semiconductor materials. The concept and theory of NHE is briefly described and is followed by a discussion of the design and fabrication by interferometric lithography of practical sample structures that satisfy the requirements of NHE. Results of NHE growth of GaAs-on-Si and GaN-on-Si are described, following the NHE process from nucleation through to coalescence. Micro-Raman measurements indicate that the strain in partially coalesced NHE GaN-on-Si films is <0.1 GPa.

Keywords

III-V semiconductors; MOCVD; Raman spectra; gallium arsenide; gallium compounds; nanotechnology; nucleation; photolithography; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; GaAs-Si; GaAs-on-Si; GaN-Si; GaN-on-Si; MOCVD growth; Si; coalescence; design; fabrication; highly mismatched semiconductor materials; integration; interferometric lithography; micro-Raman measurements; nanoheteroepitaxy; nanoscale growth-initiation areas; nucleation; strain; Capacitive sensors; Gallium nitride; Lattices; Nanostructured materials; Optical devices; Optical materials; Semiconductor materials; Strain measurement; Substrates; Sun;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2002.800987

Filename

1021018