Title :
Accurate methods for study of light emission from quantum wells confined in a microcavity
Author :
Constant, Stephanie B. ; Hosea, T.J.C. ; Toikkanen, Lauri ; Hirvonen, Illka ; Pessa, Markus V.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
fDate :
8/1/2002 12:00:00 AM
Abstract :
Photomodulated reflectance (PR) and conventional reflectance studies have been performed on an InGaP/AlGaInP/Alx1Gay1As/Alx2Gay2As resonant-cavity light emitting diode structure in the red spectral region. The PR spectra show prominent signals from the Fabry-Perot cavity mode and the quantum-well (QW) ground state excitonic transition. This high-precision technique, and its variations as functions of incidence angle and temperature, as reported in this article, allow one to investigate light emission from the QW confined in a microcavity with relation to the Fabry-Perot mode, and is the only known nonconductive, nondestructive method of doing so.
Keywords :
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; excitons; gallium arsenide; gallium compounds; ground states; indium compounds; light emitting diodes; photoreflectance; quantum well devices; reflectivity; semiconductor quantum wells; visible spectra; Fabry-Perot cavity mode; InGaP-AlGaInP-AlGaAs-AlGaAs; InGaP/AlGaInP/Alx1Gay1As/Alx2Gay2As resonant-cavity light emitting diode structure; accurate methods; conventional reflectance studies; high-precision technique; incidence angle; light emission; microcavity; nonconductive nondestructive method; photomodulated reflectance; quantum wells; quantum-well ground state excitonic transition; red spectral region; temperature; Distributed Bragg reflectors; Light emitting diodes; Microcavities; Optical transmitters; Potential well; Quantum wells; Reflectivity; Resonance; Temperature; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2002.801004
