Birefringent properties of GaAlAs multiple quantum well planar optical waveguides

Author

Kumar, Mukesh ; Boyd, Joseph T. ; Jackson, Howard E. ; Weiss, Bernard L.

Author_Institution

Cincinnati Univ., OH, USA

Volume

28

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1678

Lastpage

1688

Abstract

Planar GaAlAs optical waveguides in which the waveguide core region is composed of multiple quantum wells are considered. Calculations of optical waveguide dispersion are performed to determine variations in effective refractive indexes for TE and TM modes and in the mode birefringence for large ranges of total waveguide thickness, number, and refractive index of well and barrier layers, and the ratio of well and barrier layer thickness. Ranges of these parameters which yield optical waveguides having unusually high birefringence and optical waveguides supporting single polarization planar propagation only are identified

Keywords

III-V semiconductors; aluminium compounds; birefringence; gallium arsenide; integrated optics; optical dispersion; optical waveguides; refractive index; semiconductor quantum wells; GaAlAs multiple quantum well planar optical waveguides; III-V semiconductors; barrier layer thickness; effective refractive indexes; mode birefringence; optical waveguide dispersion; single polarization planar propagation; total waveguide thickness; transverse electric modes; transverse magnetic modes; well layer thickness; Birefringence; Dispersion; Optical planar waveguides; Optical polarization; Optical refraction; Optical variables control; Optical waveguides; Planar waveguides; Refractive index; Tellurium;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.142555

Filename

142555