Title :
High coercivity γ-(Fe,Co,Mn)2O3 thin films for magnetic recording
Author :
Chang, W.D. ; Chin, T.S. ; Tu, S.C. ; Li, B.H. ; Wu, H.S. ; Jou, J.H.
Author_Institution :
Dept. of Mater. Sci. & Eng., Tsing Hua Univ., Hsinchu, Taiwan
fDate :
11/1/1995 12:00:00 AM
Abstract :
Thin (Fe,Co,Mn)3O4 films were deposited in-situ on a Si substrate under well controlled O2 partial pressure by dc-reactive magnetron sputtering. The coercivity of as-deposited magnetite films is around 400~640 Oe. After oxidation at 360°C for 90 minutes, the films transform to maghemite γ-(Co,Mn,Fe)2O3 completely, and the coercivity is increased 1~7 times to 640~3500 Oe, depending on the target composition. The origin of coercivity enhancement is attributed to magneto-anisotropy which is induced by the interfacial stress of the films and the directional order imposed by Co and Mn
Keywords :
cobalt compounds; coercive force; ferrimagnetic materials; induced anisotropy (magnetic); internal stresses; iron compounds; magnetic recording; magnetic thin films; magnetisation; magnetomechanical effects; manganese compounds; sputter deposition; γ-(Fe,Co,Mn)2O3 thin films; 360 C; 90 min; FeCoMnO3; Si; Si substrate; coercivity enhancement; controlled O2 partial pressure; dc-reactive magnetron sputtering; directional order; high coercivity films; interfacial stress; maghemite; magnetic recording; magneto-anisotropy; oxidation; saturation magnetization; Annealing; Coercive force; Magnetic anisotropy; Magnetic films; Magnetic recording; Oxidation; Perpendicular magnetic anisotropy; Semiconductor films; Sputtering; Substrates;
Journal_Title :
Magnetics, IEEE Transactions on
