Title :
A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon
Author :
Kasai, Seiya ; Hasegawa, Hideki
Author_Institution :
Res. Center for Integrated Quantum Electron. (RCIQE), Hokkaido Univ., Sapporo, Japan
Abstract :
A novel hexagonal binary-decision-diagram (BDD) quantum logic circuit approach for III-V quantum large scale integrated circuits is proposed and its basic feasibility is demonstrated. In this approach, a III-V hexagonal nanowire network is controlled by Schottky wrap gates (WPGs) to implement BDD logic architecture by path switching. A novel single electron BDD OR logic circuit is successfully fabricated on a GaAs nanowire hexagon and correct circuit operation has been confirmed from 1.5 K to 120 K, showing that the WPG BDD circuit can operate over a wide temperature range by trading off between the power-delay product and the operation temperature.
Keywords :
binary decision diagrams; combinational circuits; gallium arsenide; integrated logic circuits; large scale integration; quantum gates; semiconductor quantum dots; semiconductor quantum wires; single electron transistors; GaAs; III-V hexagonal nanowire network; Schottky wrap gate control; combinational logic function; electron beam lithography; hexagonal BDD quantum logic circuit; integration feasibility; path switching; power-delay product; quantum dot; quantum large scale integrated circuits; single electron OR logic circuit; tunneling barriers; wide temperature range; wired array; Binary decision diagrams; Electrons; Gallium arsenide; III-V semiconductor materials; Large scale integration; Logic circuits; Logic functions; Nanoscale devices; Quantum computing; Registers;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.801291
