Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

We demonstrate a novel RF switch based on a multifinger AlGaN/GaN MOSHFET. Record high saturation current and breakdown voltage, extremely low gate leakage current and low gate capacitance of the III-N MOSHFETs make them excellent active elements for RF switching. Using a single element test circuit with 1-mm wide multifinger MOSHFET we achieved 0.27 dB insertion loss and more than 40 dB isolation. These parameters can be further improved by impedance matching and by using submicron gate devices. The maximum switching power extrapolated from the results for 1A/mm 100 μm wide device exceeds 40 W for a 1-mm wide 2-A/mm MOSHFET.