Title :
Formation of Ni germano-silicide on single crystalline Si/sub 0.3/Ge/sub 0.7//Si
Author :
Lin, C.Y. ; Chen, W.J. ; Lai, C.H. ; Chin, Albert ; Liu, J.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We have studied the Ni and Co germano-silicide on Si/sub 0.3/Ge/sub 0.7//Si. The Ni germano-silicide shows a low sheet resistance of 4-6 /spl Omega///spl square/on both P/sup +/N and N/sup +/P junctions, which is much smaller than Co germano-silicide. In addition, small junction leakage currents of 3/spl times/10/sup -8/ A/cm/sup 2/ and 2/spl times/10/sup -7/ A/cm/sup 2/ are obtained for Ni germano-silicide on P/sup +/N and N/sup +/P junctions, respectively. The good germano-silicide integrity is due to the relatively uniform thickness as observed by cross-sectional TEM.
Keywords :
Ge-Si alloys; MOSFET; X-ray diffraction; electron diffraction; ion implantation; leakage currents; p-n heterojunctions; rapid thermal annealing; silicon; transmission electron microscopy; CoGeSi; N/sup +/P junctions; NiGeSi; P/sup +/N junctions; RTA; Si/sub 0.3/Ge/sub 0.7/-Si; XRD; cross-sectional TEM; electron diffraction patterns; germano-silicide formation; germano-silicide integrity; ion implantation; low sheet resistance; p-MOSFET; relatively uniform thickness; silicidation; single crystalline junction; small junction leakage currents; solid phase epitaxy; Crystallization; Epitaxial growth; Germanium silicon alloys; Leakage current; MOSFET circuits; Silicidation; Silicides; Silicon germanium; Temperature; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.801288
