High Q multilayer spiral inductor on silicon chip for 5/spl sim/6 GHz

Author

Lihui, Guo ; Mingbin, Yu ; Zhen, Chen ; Han, He ; Yi, Zhang

Author_Institution

Inst. of Microelectron., Singapore, Singapore

Volume

23

Issue

8

fYear

2002

Firstpage

470

Lastpage

472

Abstract

High Q-values of spiral inductors at frequency around 5/spl sim/6 GHz have been achieved with a multilayer spiral (MLS) structure on a high loss silicon substrate. Compared to a one-layer spiral (OLS) inductor, the Q-value of a 4-nH inductor has been improved by about 80% at 5.65 GHz. The impact of the structure on Q-value and resonant frequency has been analyzed, which shows that an optimal height for the via of MLS inductors should be considered when inductors are designed. The fabrication process is compatible with Cu/SiO/sub 2/ interconnect technology.

Keywords

CMOS integrated circuits; Q-factor; S-parameters; field effect MMIC; inductors; integrated circuit interconnections; 5.65 GHz; CMOS interconnect technology; RF testing; S-parameters; Si; Y-parameter; high Q multilayer spiral inductor; high loss silicon substrate; lower ohmic loss; on-chip inductors; optimal height; resonant frequency; spiral coils; top-add structure; wireless LAN; CMOS technology; Copper; Frequency; Inductors; Integrated circuit interconnections; Multilevel systems; Nonhomogeneous media; Silicon; Spirals; Wireless LAN;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.801322

Filename

1021096