Title :
High Q multilayer spiral inductor on silicon chip for 5/spl sim/6 GHz
Author :
Lihui, Guo ; Mingbin, Yu ; Zhen, Chen ; Han, He ; Yi, Zhang
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
Abstract :
High Q-values of spiral inductors at frequency around 5/spl sim/6 GHz have been achieved with a multilayer spiral (MLS) structure on a high loss silicon substrate. Compared to a one-layer spiral (OLS) inductor, the Q-value of a 4-nH inductor has been improved by about 80% at 5.65 GHz. The impact of the structure on Q-value and resonant frequency has been analyzed, which shows that an optimal height for the via of MLS inductors should be considered when inductors are designed. The fabrication process is compatible with Cu/SiO/sub 2/ interconnect technology.
Keywords :
CMOS integrated circuits; Q-factor; S-parameters; field effect MMIC; inductors; integrated circuit interconnections; 5.65 GHz; CMOS interconnect technology; RF testing; S-parameters; Si; Y-parameter; high Q multilayer spiral inductor; high loss silicon substrate; lower ohmic loss; on-chip inductors; optimal height; resonant frequency; spiral coils; top-add structure; wireless LAN; CMOS technology; Copper; Frequency; Inductors; Integrated circuit interconnections; Multilevel systems; Nonhomogeneous media; Silicon; Spirals; Wireless LAN;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.801322
