Microwave performance of diamond surface-channel FETs

Author

Aleksov, A. ; Denisenko, A. ; Spitzberg, U. ; Ebert, W. ; Kohn, E.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

Volume

23

Issue

8

fYear

2002

Firstpage

488

Lastpage

490

Abstract

S-parameters measurements were carried out on diamond-based FET devices with a p-type channel induced by hydrogen surface termination extracting f_T and f_max for devices with gate lengths ranging from 5 μm to 0.2 μm. For the 0.2 μm gate length FET f_T=11.55 GHz and f_max (MAG)=33.3 GHz values were obtained. High f_max (MAG)/f_T ratios of above 2.5 were obtained for all devices. Further downscaling may result in an f_T above 20 GHz and in addition, an f_max (MAG) above 50 GHz.

Keywords

S-parameters; diamond; hydrogenation; microwave field effect transistors; plasma CVD; surface treatment; 11.55 GHz; 33.3 GHz; 50 GHz; C; C:H; S-parameters; Schottky contacts; coplanar configuration; diamond-based FET; downscaling; gate length dependence; homoepitaxial layers; hydrogen surface termination; microwave performance; microwave plasma CVD; ohmic contacts; p-type channel; p-type conductivity; small signal parameter; surface-channel FET; Chemical vapor deposition; Hydrogen; Insulation; Length measurement; Microwave FETs; Microwave devices; Plasma measurements; Plasma temperature; Scattering parameters; Surface treatment;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.801286

Filename

1021102