Title :
Microwave performance of diamond surface-channel FETs
Author :
Aleksov, A. ; Denisenko, A. ; Spitzberg, U. ; Ebert, W. ; Kohn, E.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Abstract :
S-parameters measurements were carried out on diamond-based FET devices with a p-type channel induced by hydrogen surface termination extracting fT and fmax for devices with gate lengths ranging from 5 μm to 0.2 μm. For the 0.2 μm gate length FET fT=11.55 GHz and fmax (MAG)=33.3 GHz values were obtained. High fmax (MAG)/fT ratios of above 2.5 were obtained for all devices. Further downscaling may result in an fT above 20 GHz and in addition, an fmax (MAG) above 50 GHz.
Keywords :
S-parameters; diamond; hydrogenation; microwave field effect transistors; plasma CVD; surface treatment; 11.55 GHz; 33.3 GHz; 50 GHz; C; C:H; S-parameters; Schottky contacts; coplanar configuration; diamond-based FET; downscaling; gate length dependence; homoepitaxial layers; hydrogen surface termination; microwave performance; microwave plasma CVD; ohmic contacts; p-type channel; p-type conductivity; small signal parameter; surface-channel FET; Chemical vapor deposition; Hydrogen; Insulation; Length measurement; Microwave FETs; Microwave devices; Plasma measurements; Plasma temperature; Scattering parameters; Surface treatment;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.801286
