HEMT for low-noise microwaves: CAD-oriented performance evaluation

Author

Capponi, Giuseppe ; Di Maio, Bruno ; Livreri, Patrizia

Author_Institution

Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy

Volume

43

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

1226

Lastpage

1229

Abstract

This paper shows how a graphic processing of low-noise HEMT´s small signal parameters, allows evaluating and comparing the actual performance obtainable in front-end applications. HEMT´s tradeoff charts which solve tradeoffs among the basic low-noise amplifier performance are reported. Figures of merit for microwave low-noise HEMT which represent a fast way of evaluating HEMT in actual working conditions and of selecting the proper transistor, are defined. As an example, the tradeoff charts and the figures of merit of two HEMT´s (Fujitsu FHR02FH, Sony 2SK677) and a pseudomorphic-HEMT (Celeritek CFB001-03) are reported and compared with the data sheets

Keywords

S-parameters; circuit CAD; electronic engineering computing; engineering graphics; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; CAD-oriented performance evaluation; Celeritek CFB001-03; Fujitsu FHR02FH; Sony 2SK677; front-end applications; graphic processing; low-noise microwave operation; pseudomorphic device; small signal parameters; Acoustic reflection; Employee welfare; Frequency; HEMTs; Impedance; Low-noise amplifiers; Microwave transistors; Noise figure; Scattering parameters; Transformers;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.390175

Filename

390175