A comparison of planar doped barrier diode performance versus Schottky diode performance in a single balanced, MIC mixer with low LO drive

Author

Poelker, John N. ; Robertson, Ralston S.

Author_Institution

Hughes Missile Syst. Co., Canoga Park, CA, USA

Volume

43

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

1241

Lastpage

1246

Abstract

This paper demonstrates that an unbiased GaAs planar doped barrier (PDB) diode, single balanced, Ku-band mixer achieves conversion loss performance comparable to a bias-optimized GaAs Schottky design at low local oscillator (LO) power levels for identical RF circuits. An experimental, side-by-side, performance comparison as a function of LO power is presented along with a harmonic balance (HB) simulation. The PDB diode is of interest for its zero-bias requirement and the high pulsed peak power handling potential for low-cost radars

Keywords

Schottky diode mixers; microwave diodes; microwave integrated circuits; microwave mixers; nonlinear network analysis; GaAs; Ku-band mixer; LO power; SHF; Schottky diode; conversion loss performance; harmonic balance simulation; high pulsed peak power handling; low LO drive; low-cost radar; performance comparison; planar doped barrier diode; single balanced MIC mixer; zero-bias requirement; Circuits; Gallium arsenide; Packaging; Performance loss; Power generation; Radar; Radio frequency; Schottky diodes; Semiconductor diodes; Testing;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.390178

Filename

390178