DocumentCode :
79273
Title :
Author :
Hongyu He ; Xueren Zheng ; Shengdong Zhang
Author_Institution :
Shenzhen Grad. Sch., Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China
Volume :
36
Issue :
2
fYear :
2015
fDate :
Feb. 2015
Firstpage :
156
Lastpage :
158
Abstract :
Analytical 1/f noise expressions are presented for amorphous InGaZnO thin-film transistors considering the well-known power-law parameter α in the mobility equation. The drain current noise power spectral density (PSD) is derived from Ghibaudo´s carrier number fluctuation model. It is found that the parameter α clarifies the relationship between the drain current noise PSD and the drain current. The relationship is verified by the available experimental data.
Keywords :
1/f noise; gallium compounds; indium compounds; semiconductor device models; semiconductor device noise; thin film transistors; wide band gap semiconductors; zinc compounds; Ghibaudo carrier number fluctuation model; InGaZnO; above-threshold regime; amorphous TFT; amorphous thin-film transistors; analytical 1/f noise expressions; drain current noise PSD; drain current noise power spectral density; mobility equation; mobility power-law parameter; Low-frequency noise; Mathematical model; Semiconductor device modeling; Silicon; Thin film transistors; InGaZnO (IGZO); Thin-film transistor (TFT); carrier mobility; low frequency noise;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2378251
Filename :
6977901
Link To Document :
