Two-level Voltage-controlled magnetization switch using a ferromagnetic semiconductor resonant-tunneling diode

It is predicted from a simple analytic theory of quantum transport, coupled to the mean-field theory for dilute magnetic semiconductor ferromagnetism, that a resonant-tunneling diode with a ferromagnetic semiconductor well can be engineered to function as a two-level magnetic switch with a large magnetization swing controlled by the applied bias across the device. Self-consistent transport and electrostatics simulations, together with the aforementioned mean-field theory, are used to illustrate a single, sharp transition of the Curie temperature of the system from its equilibrium value to nearly zero for a suitable choice of device parameters.