Design analysis of 1550-nm GaAsSb-(In)GaAsN type-II quantum-well laser active regions

Author

Tansu, Nelson ; Mawst, Luke J.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

Volume

39

Issue

10

fYear

2003

Firstpage

1205

Lastpage

1210

Abstract

A novel active region design is proposed to achieve long-wavelength (λ = 1550-nm) diode lasers based on a type-II quantum-well (QW) design of (In)GaAsN-GaAsSb grown on a GaAs substrate. The strain-compensated structures hold potential as an ideal active region for 1500-nm GaAs-based vertical cavity surface emitting lasers. A design analysis and optimization of 1550-nm emitting structures is presented. An optimal type-II multiple-QW design allows for electron-hole wavefunction overlaps of greater than 50%.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical transmitters; quantum well lasers; surface emitting lasers; 1550 nm; GaAs; GaAs substrate; GaAsSb-(In)GaAsN type-II quantum-well laser active regions; GaAsSb-InGaAsN; active region design; design analysis; electron-hole wavefunction overlaps; emitting structures; ideal active region; long-wavelength diode lasers; strain-compensated structures; vertical cavity surface emitting lasers; Capacitive sensors; Gallium arsenide; Optical design; Optical materials; Quantum well devices; Quantum well lasers; Semiconductor lasers; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2003.817235

Filename

1233722