Fabrication and Operating Characteristics of Ion-Implanted Bubble Memory Chips for a 16M-Bit Device

A test chip using ion-implanted functions for a 16-Mbit bubble memory device has been designed, fabricated and characterized. A new delineation process for ion-implanted tracks using SiO2 ion-implantation masks is effective for reducing defects in minor loops. As a result, a bias margin of 22 Oe was obtained for minor loop bubble propagation. Test chip operation over a wide temperature range, from ¿25°C to 80°C, has been realized.