Title :
Geiger mode operation of an In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode
Author :
Karve, Gauri ; Zheng, Xiaoguang ; Zhang, Xiaofeng ; Li, Xiaowei ; Li, Ning ; Wang, Shuling ; Ma, Feng ; Holmes, Archie, Jr. ; Campbell, Joe C. ; Kinsey, G.S. ; Boisvert, J.C. ; Isshiki, T.D. ; Sudharsanan, R. ; Bethune, Donald S. ; Risk, William P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Abstract :
Low-temperature photon counting with gated mode quenching is demonstrated with separate absorption, charge, and multiplication avalanche photodiodes that have an In0.52Al0.48As multiplication layer. A minimum of ten dark counts per second and single-photon detection efficiency of 16% were achieved at 130 K.
Keywords :
aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; photon counting; 130 K; 16 percent; Geiger mode operation; In0.53Ga0.47As-In0.52Al0.48As; In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode; dark counts; gated mode quenching; low-temperature photon counting; multiplication avalanche photodiodes; separate absorption charge and multiplication avalanche photodiodes; single-photon detection efficiency; Absorption; Avalanche photodiodes; Breakdown voltage; Charge carrier processes; Cryptography; Detectors; Impact ionization; Indium phosphide; Photodetectors; Photonic band gap;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2003.817244
