Temperature stable Hall effect sensors

Author

Partin, Dale L. ; Heremans, Joseph P. ; Schroeder, Thaddeus ; Thrush, Christopher M. ; Flores-Mena, Luis A.

Author_Institution

Delphi Res. Labs., Shelby Township, MI, USA

Volume

6

Issue

1

fYear

2006

Firstpage

106

Lastpage

110

Abstract

Magnetic field sensors are needed for high-accuracy position, angle, force, strain, torque, and current flow measurements. Molecular beam epitaxy was used to grow tellurium-doped indium-gallium antimonide thin films. Hall effect sensors made from these films have been studied for their magnetic sensitivity and thermal stability. For a range of alloy composition near In_0.8Ga_0.2Sb and n-type doping levels near 2×10¹⁷ cm^-3, high magnetic sensitivity from -40°C to +200°C was found with a resolution of better than ±0.5% over the entire temperature range.

Keywords

Hall effect transducers; III-V semiconductors; carrier mobility; indium compounds; magnetic sensors; molecular beam epitaxial growth; semiconductor thin films; tellurium; thermal stability; vapour deposited coatings; -40 to 200 C; Hall effect sensors; In_0.8Ga_0.2Sb; InGaSb:Te; electron mobility; magnetic field sensors; magnetic sensitivity; molecular beam epitaxy; n-type doping levels; tellurium-doped indium-gallium antimonide thin films; temperature stability; thermal stability; Capacitive sensors; Current measurement; Force measurement; Force sensors; Hall effect devices; Magnetic field induced strain; Magnetic field measurement; Magnetic sensors; Strain measurement; Temperature sensors; Electron mobility; Hall effect sensor; indium–gallium antimonide; molecular beam epitaxy (MBE); thermal stability;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2005.860362

Filename

1576759