Title :
A nonvolatile memory based on reversible phase changes between fcc and hcp
Author :
Ahn, Dong-Ho ; Kang, Dae-Hwan ; Cheong, Byung-ki ; Kwon, Hyuk-Soon ; Kwon, Min-Ho ; Lee, Tae-Yeon ; Jeong, Jeung-hyun ; Lee, Taek Sung ; Kim, In Ho ; Kim, Ki-Bum
Author_Institution :
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
fDate :
5/1/2005 12:00:00 AM
Abstract :
A nonvolatile memory technology utilizing reversible changes between fcc and hcp crystalline phases is proposed. In this new type of phase-change memory, data are stored in different forms of crystalline phases of (Ge1Sb2Te4)0.8(Sn1Bi2Te4)0.2 chalcogenide alloy. RESET operation produces the less conductive metastable fcc phase via melt-quenching from the more conductive stable hcp phase and SET operation involves a phase change from fcc directly to hcp. Both RESET and SET operations can be completed as fast as 70 ns with large changes in cell resistance.
Keywords :
amorphous semiconductors; antimony alloys; bismuth alloys; germanium alloys; phase transformations; random-access storage; tellurium alloys; tin alloys; (Ge1Sb2Te4)0.8(Sn1Bi2Te4)0.2; RESET operation; amorphous semiconductor; chalcogenide alloy; crystalline phase; melt-quenching; nonvolatile memory technology; phase transformation; phase-change memory; reversible phase change; Annealing; Bismuth; Crystallization; FCC; Germanium alloys; Materials science and technology; Nonvolatile memory; Scanning electron microscopy; Tellurium; Tin alloys; Amorphous semiconductor; chalcogenide; nonvolatile memory; phase transformation; phase-change memory (PCM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.846576
