Title :
Resistance-switching Characteristics of polycrystalline Nb2O5 for nonvolatile memory application
Author :
Sim, Hyunjun ; Choi, Dooho ; Lee, Dongsoo ; Seo, Sunae ; Lee, Myong-Jae ; Yoo, In-Kyeong ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., South Korea
fDate :
5/1/2005 12:00:00 AM
Abstract :
The resistance switching characteristics of polycrystalline Nb2O5 film prepared by pulsed-laser deposition (PLD) were investigated for nonvolatile memory application. Reversible resistance-switching behavior from a high resistance state to a lower state was observed by voltage stress with current compliance. The reproducible resistance-switching cycles were observed and the resistance ratio was as high as 50-100 times. The resistance switching was observed under voltage pulse as short as 10 ns. The estimated retention lifetime at 85°C was sufficiently longer than ten years. Considering its excellent electrical and reliability characteristics, Nb2O5 shows strong promise for future nonvolatile memory applications.
Keywords :
niobium compounds; pulsed laser deposition; random-access storage; 85 C; Nb2O5; nonvolatile memory; poly crystalline; pulsed-laser deposition; resistance switching characteristics; switching retention; switching time; voltage stress; Materials science and technology; Niobium; Nonvolatile memory; Optical pulses; Pulsed laser deposition; Random access memory; Read-write memory; Semiconductor films; Stress; X-ray scattering; Nb; pulsed laser deposition (PLD); resistance switching; switching retention; switching time;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.846592
