Electrical properties of amorphous high-κ HfTaTiO gate dielectric with dielectric constants of 40-60

Author

Lu, N. ; Li, H.J. ; Gardner, M. ; Wickramanayaka, S. ; Kwong, D.-L.

Author_Institution

Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA

Volume

26

Issue

5

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

298

Lastpage

300

Abstract

High-quality Hf-based gate dielectrics with dielectric constants of 40-60 have been demonstrated. Laminated stacks of Hf, Ta, and Ti with a thickness of ∼10 Å each was deposited on Si followed by rapid thermal anneal. X-ray diffraction analysis showed that the crystallization temperature of the laminated dielectric stack is increased up to 900°C. The excellent electrical properties of HfTaTiO dielectrics with TaN electrode have been demonstrated, including low interface state density (D_it), leakage current, and trap density. The effect of binary and ternary laminated metals on the enhancement of dielectric constant and electrical properties has been studied.

Keywords

X-ray diffraction; amorphous state; dielectric materials; electrodes; hafnium alloys; laminates; rapid thermal annealing; silicon; tantalum alloys; tantalum compounds; titanium alloys; 900 C; HfTaTiO; MOSCAP; Si; TaN; X-ray diffraction analysis; crystallization temperature; dielectric constants; electrode; gate dielectric; interface state density; laminated dielectric stack; laminated metals; leakage current; rapid thermal annealing; trap density; Amorphous materials; Crystallization; Dielectric constant; Electrodes; Hafnium; Interface states; Leakage current; Rapid thermal annealing; Temperature; X-ray diffraction; Crystallization temperature; MOSCAPs; hafnium-based dielectrics; high-; interface properties; laminated structure;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.846893

Filename

1425688