DocumentCode
79336
Title
Flip-Chip Interconnection Lumped-Electrode EADFB Laser for 100-Gb/s/ 
Transmitter
Author
Kanazawa, Shigeru ; Fujisawa, Takeshi ; Takahata, Kiyoto ; Ito, Toshio ; Ueda, Yuta ; Kobayashi, Wataru ; Ishii, Hiroyuki ; Sanjoh, Hiroaki
Author_Institution
NTT Device Innovation Center, NTT Corp., Atsugi, Japan
Volume
27
Issue
16
fYear
2015
fDate
Aug.15, 15 2015
Firstpage
1699
Lastpage
1701
Abstract
We have achieved the 100-Gb/s/λ operation of a flip-chip interconnection 1.3-μm lumped-electrode electroabsorption modulator integrated with a distributed feedback laser module for the first time. The flip-chip interconnection provides a flatter frequency response characteristic and a higher modulation bandwidth. Clear eye opening was achieved for 103-Gb/s nonreturn to zero and equalizer-free 56-GBd 4-pulseamplitude modulation operation after a 10-km single-mode fiber transmission.
Keywords
distributed feedback lasers; electro-optical modulation; electrodes; flip-chip devices; integrated optics; integrated optoelectronics; optical fibre communication; optical interconnections; optical modulation; optical transmitters; pulse amplitude modulation; quantum well lasers; bit rate 100 Gbit/s; bit rate 103 Gbit/s; clear eye opening; distance 10 km; distributed feedback laser module; electroabsorption modulator; equalizer-free 4-pulse-amplitude modulation; flat frequency response; flip-chip interconnection; high modulation bandwidth; lumped-electrode EADFB laser; nonreturn-to-zero operation; optical transmitter; single-mode fiber transmission; wavelength 1.3 mum; Bandwidth; Distributed feedback devices; Flip-chip devices; Frequency response; Integrated circuit interconnections; Modulation; 100 Gb/s; Distributed feedback (DFB) laser; EADFB laser; Ethernet; InGaAlAs; electroabsorption modulator (EAM); flip-chip interconnection;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2015.2438076
Filename
7113803
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