Title : 
Flip-Chip Interconnection Lumped-Electrode EADFB Laser for 100-Gb/s/
  
  Transmitter
 
        
            Author : 
Kanazawa, Shigeru ; Fujisawa, Takeshi ; Takahata, Kiyoto ; Ito, Toshio ; Ueda, Yuta ; Kobayashi, Wataru ; Ishii, Hiroyuki ; Sanjoh, Hiroaki
         
        
            Author_Institution : 
NTT Device Innovation Center, NTT Corp., Atsugi, Japan
         
        
        
        
        
        
        
        
            Abstract : 
We have achieved the 100-Gb/s/λ operation of a flip-chip interconnection 1.3-μm lumped-electrode electroabsorption modulator integrated with a distributed feedback laser module for the first time. The flip-chip interconnection provides a flatter frequency response characteristic and a higher modulation bandwidth. Clear eye opening was achieved for 103-Gb/s nonreturn to zero and equalizer-free 56-GBd 4-pulseamplitude modulation operation after a 10-km single-mode fiber transmission.
         
        
            Keywords : 
distributed feedback lasers; electro-optical modulation; electrodes; flip-chip devices; integrated optics; integrated optoelectronics; optical fibre communication; optical interconnections; optical modulation; optical transmitters; pulse amplitude modulation; quantum well lasers; bit rate 100 Gbit/s; bit rate 103 Gbit/s; clear eye opening; distance 10 km; distributed feedback laser module; electroabsorption modulator; equalizer-free 4-pulse-amplitude modulation; flat frequency response; flip-chip interconnection; high modulation bandwidth; lumped-electrode EADFB laser; nonreturn-to-zero operation; optical transmitter; single-mode fiber transmission; wavelength 1.3 mum; Bandwidth; Distributed feedback devices; Flip-chip devices; Frequency response; Integrated circuit interconnections; Modulation; 100 Gb/s; Distributed feedback (DFB) laser; EADFB laser; Ethernet; InGaAlAs; electroabsorption modulator (EAM); flip-chip interconnection;
         
        
        
            Journal_Title : 
Photonics Technology Letters, IEEE
         
        
        
        
        
            DOI : 
10.1109/LPT.2015.2438076