A study of negative-bias temperature instability of SOI and body-tied FinFETs

Author

Lee, Hyunjin ; Lee, Choong-Ho ; Park, Donggun ; Choi, Yang-Kyu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

26

Issue

5

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

326

Lastpage

328

Abstract

Negative-bias temperature-instability (NBTI) characteristics are carefully studied on SOI and body-tied pMOS FinFETs for the first time. It was observed that a narrow fin width degraded device lifetime more than a wider fin width. Electrons generated by the NBT stress are accumulated at the center of a silicon fin and cause energy-band bending. This results in an incremental hole population at the interface. The energy band is bent more steeply at the narrow fin than at the wide fin by the accumulated electrons. A body-tied FinFET shows better immunity to NBT stress due to a substrate contact.

Keywords

MOSFET; semiconductor device reliability; silicon-on-insulator; SOI; body-tied FinFETs; device lifetime; energy-band bending; floating body; incremental hole population; narrow fin width; negative-bias temperature instability; reliability; substrate contact; CMOS technology; Degradation; Electrons; FinFETs; Niobium compounds; Silicon; Stress; Substrates; Temperature; Titanium compounds; Body-tied; FinFET; SOI; double-gate; floating body; negative-bias temperature instability (NBTI); reliability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.846587

Filename

1425697