Area-efficient CMOS charge pumps for LCD drivers

Author

Ying, TianRui ; Ki, Wing-Hung ; Chan, Mansun

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

38

Issue

10

fYear

2003

Firstpage

1721

Lastpage

1725

Abstract

Area-efficient 4× charge pumps based on the cross-coupled structure that uses the V_dd-2V_dd outputs alternately to reduce the number of power devices and capacitors are presented. Compared with conventional designs, our best design can save two power transistors, one capacitor, and two level shift circuits. An integrated 4× charge pump is then designed to deliver 100 μA at 9 V using a 0.8-μm AMS high-voltage CMOS process. The topology can be extended to 2n× charge pumps, and a 6× charge pump is also fabricated and tested to demonstrate the validity of the extension.

Keywords

CMOS analogue integrated circuits; DC-DC power convertors; driver circuits; integrated circuit design; liquid crystal displays; network topology; power integrated circuits; switched capacitor networks; 0.8 micron; 100 muA; 2n× charge pumps; 6× charge pump; 9 V; AMS high-voltage CMOS process; LCD drivers; area-efficient CMOS charge pumps; capacitor number reduction; cross-coupled structure; dc-dc converter; integrated 4× charge pump; level shift circuits; power device number reduction; switched-capacitor power converters; voltage multiplier; CMOS process; Charge pumps; Circuit topology; Diodes; Electromagnetic interference; MOS devices; Power capacitors; Power transistors; Switching converters; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2003.817596

Filename

1233778