Title :
A 200-V high-voltage amplifier using a parasitic field-oxide transistor for voltage feedback
Author_Institution :
Berkeley Design Center, Analog Devices, Berkeley, CA, USA
Abstract :
A 200-V high-voltage amplifier with a 50-kHz bandwidth is built in a 10-V trench-isolated CMOS process with complementary high-voltage transistors. The high-voltage amplifier uses parasitic field-oxide transistors to dc stabilize the input-output voltage transfer characteristic. Use of parasitic field-oxide transistors for output voltage sensing provides only a small capacitive output load and eliminates the need for high-voltage resistor feedback networks. By removing resistor feedback networks, compact and low-power high-voltage amplifiers may be realized for a certain class of applications.
Keywords :
CMOS analogue integrated circuits; feedback amplifiers; low-power electronics; power amplifiers; 200 V; 50 kHz; complementary high-voltage transistor; low-power high-voltage amplifier; parasitic field oxide transistor; trench-isolated CMOS process; voltage feedback; voltage transfer characteristic; Bandwidth; CMOS process; Mirrors; Operational amplifiers; Optical amplifiers; Optical feedback; Optical sensors; Resistors; Stimulated emission; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2003.817594
