Title :
SiC materials-progress, status, and potential roadblocks
Author :
Powell, Adrian R. ; Rowland, Larry B.
Author_Institution :
Cree Inc., Durham, NC, USA
fDate :
6/1/2002 12:00:00 AM
Abstract :
SiC materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emitting diodes (LEDs). Emerging markets for SiC homoepitaxy include high-power switching devices and microwave devices for S and X band. Applications for heteroepitaxial GaN-based structures on SiC substrates include LEDs and microwave devices. In this paper we review the properties of SiC, assess the current status of substrate and epitaxial growth, and outline our expectations for SiC in the future.
Keywords :
light emitting diodes; microwave materials; power semiconductor switches; semiconductor growth; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; GaN-SiC; S band devices; SiC; SiC homoepitaxy; SiC materials; SiC substrates; X band devices; blue LEDs; epitaxial growth; green LEDs; heteroepitaxial GaN-based structures; high-power switching devices; hot-wall epitaxy; market driven manufacturing product; microwave devices; ultraviolet light-emitting diodes; vapor phase epitaxy; Atomic layer deposition; Epitaxial growth; Light emitting diodes; Microwave devices; Silicon carbide; Stacking; Substrates; Thermal conductivity; Thermal management; Thermal resistance;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/JPROC.2002.1021560
