SiC materials-progress, status, and potential roadblocks

Author

Powell, Adrian R. ; Rowland, Larry B.

Author_Institution

Cree Inc., Durham, NC, USA

Volume

90

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

942

Lastpage

955

Abstract

SiC materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emitting diodes (LEDs). Emerging markets for SiC homoepitaxy include high-power switching devices and microwave devices for S and X band. Applications for heteroepitaxial GaN-based structures on SiC substrates include LEDs and microwave devices. In this paper we review the properties of SiC, assess the current status of substrate and epitaxial growth, and outline our expectations for SiC in the future.

Keywords

light emitting diodes; microwave materials; power semiconductor switches; semiconductor growth; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; GaN-SiC; S band devices; SiC; SiC homoepitaxy; SiC materials; SiC substrates; X band devices; blue LEDs; epitaxial growth; green LEDs; heteroepitaxial GaN-based structures; high-power switching devices; hot-wall epitaxy; market driven manufacturing product; microwave devices; ultraviolet light-emitting diodes; vapor phase epitaxy; Atomic layer deposition; Epitaxial growth; Light emitting diodes; Microwave devices; Silicon carbide; Stacking; Substrates; Thermal conductivity; Thermal management; Thermal resistance;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/JPROC.2002.1021560

Filename

1021560