SiC microwave power technologies

Author

Clarke, R.C. ; Palmour, John W.

Author_Institution

Compound Semicond. Res. Sci. & Technol. Center, Northrop Grumman Corp., Baltimore, MD, USA

Volume

90

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

987

Lastpage

992

Abstract

Two SiC transistors that are investigated for microwave power applications are the 4H-SiC static induction transistor (SIT) and the 4H-SiC metal-semiconductor field-effect transistor (MESFET). Ultrahigh frequency 4H-SiC SITs have demonstrated record-breaking pulsed power per package (900 W) with excellent associated power-added efficiency (PAE) of 78%. S band 4H-SiC MESFETs have shown a record power-density of 5.6 W/mm and 36% PAE, as well as 80 W continuous-wave (CW) power (1.6 W/mm), with an associated PAE of 38%. X-band MESFET power density of 4.3 W/mm was obtained for exploratory CW devices. These performance gains are afforded by the advantageous material properties of silicon carbide. SiC SIT technology offers many military system advantages including lower cost, lower weight, higher power and high temperature of operation and higher efficiency transmitters with minimal cooling requirements. SiC RF MESFET´s and circuits are candidates for use in efficient linear transmitters for commercial and military communications.

Keywords

microwave field effect transistors; microwave power transistors; military equipment; power MESFET; power field effect transistors; silicon compounds; static induction transistors; wide band gap semiconductors; 36 percent; 38 percent; 4H-SiC MESFET; 4H-SiC static induction transistor; 80 W; 900 W; CW power; SiC; SiC microwave power technologies; X-band MESFET power density; linear transmitters; military system advantages; operation temperature; power-added efficiency; power-density; pulsed power per package; ultrahigh frequency 4H-SiC SITs; FETs; Frequency; MESFETs; Material properties; Microwave technology; Microwave transistors; Packaging; Performance gain; Silicon carbide; Transmitters;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/JPROC.2002.1021563

Filename

1021563