DocumentCode
793727
Title
Impact of wide bandgap microwave devices on DoD systems
Author
Kemerley, Robert Tim ; Wallace, Bruce H. ; Yoder, Max N.
Author_Institution
Aerosp. Components Div., Air Force Res. Lab., Wright-Patterson AFB, OH, USA
Volume
90
Issue
6
fYear
2002
fDate
6/1/2002 12:00:00 AM
Firstpage
1059
Lastpage
1064
Abstract
Radiofrequency (RF) semiconductor electronics enable military systems that operate in the microwave and millimeter wave frequency bands of 1-100 GHz. The performance of numerous electromagnetic systems could be enhanced by the inclusion of wide bandgap (WBG) microwave and millimeter wave devices, either as power amplifier or receiver elements. The demonstrated power performance has generally been six to ten times that of equivalent gallium arsenide or indium phosphide devices up through 20 GHz, with enhanced dynamic range and improved impedance matching. These characteristics provide an opportunity to significantly reduce the number of modules required for many active aperture antenna systems, hence, cost, while enabling new capabilities for shared apertures. Prior to realization of any WBG system deployment, however considerable development and maturation of WBG materials, devices, and circuits must yet ensue.
Keywords
active antennas; impedance matching; microwave power amplifiers; military equipment; millimetre wave power amplifiers; wide band gap semiconductors; 1 to 100 GHz; DoD systems; WBG; active aperture antenna systems; dynamic range; impedance matching; military systems; millimeter wave frequency bands; power amplifier elements; receiver elements; wide bandgap microwave devices; Apertures; Electromagnetic devices; Electromagnetic scattering; Microwave amplifiers; Microwave devices; Millimeter wave devices; Photonic band gap; Power amplifiers; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/JPROC.2002.1021570
Filename
1021570
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